View MG400Q2YS60A_888551.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

MG400Q2YS60A
TOSHIBA IGBT Module Silicon N Channel IGBT
MG400Q2YS60A
High Power Switching Applications Motor Control Applications
* * * * Integrates a complete half bridge power circuit and fault-signal output circuit in one package. (short circuit and over temperature) The electrodes are isolated from case. Low thermal resistance. VCE (sat) = 2.4 V (typ.)
Equivalent Circuit
1
5 6 7 FO E1/C2
4 1 2 3
OT
FO
E2 Signal terminal 1. 5. G (L) G (H) 2. 6. FO (L) FO (H) 3. 7. E (L) E (H) 4. 8. VD Open
1
2002-09-06
MG400Q2YS60A
Package Dimensions: 2-123C1B
1. 5.
G (L) G (H)
2. 6.
FO (L) FO (H)
3. 7.
E (L) E (H)
4. 8.
VD Open
Signal Terminal Layout
1. 7 5 8 2.54 25.4 0.6 6 2. 3. 4. 5. 6. 7. 2.54 8.
G (L) FO (L) E (L) VD G (H) FO (H) E (H) Open
3 1
4 2
2.54
Weight: 375 g
2
2002-09-06
MG400Q2YS60A
Maximum Ratings (Ta = 25C)
Stage Characteristics Collector-emitter voltage Gate-emitter voltage DC Collector current Inverter Forward current 1 ms Collector power dissipation (Tc = 25C) Control voltage (OT) Control Fault input voltage Fault input current Junction temperature Storage temperature range Module Operation temperature range Isolation voltage Screw torque 1 ms DC Symbol VCES VGES IC ICP IF IFM PC VD VFO IFO Tj Tstg Tope Visol 3/4 Rating 1200 20 400 A 800 400 A 800 3750 20 20 20 150 -40~125 -20~100 2500 (AC 1 min) 3 (M5) W V V mA C C C V Nm Unit V V
Electrical Characteristics (Tj = 25C)
1. Inverter stage
Characteristics Gate leakage current Collector cut-off current Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Turn-on delay time Switching time Turn-off time Fall time Reverse recovery time Forward voltage Symbol IGES ICES VGE (off) VCE (sat) Cies td (on) toff tf trr VF IF = 400 A Test Condition VGE = 20 V, VCE = 0 VGE = +10 V, VCE = 0 VCE = 1200 V, VGE = 0 VCE = 5 V, IC = 400 mA VGE = 15 V, IC = 400 A Tj = 25C Tj = 125C Min 3/4 3/4 3/4 6.0 3/4 3/4 3/4 0.10 VCC = 600 V, IC = 400 A VGE = 15 V, RG = 5.1 W (Note 1) (See page 4) 3/4 3/4 3/4 3/4 Typ. 3/4 3/4 3/4 7.0 2.4 3/4 31000 3/4 3/4 3/4 3/4 2.4 Max +3/-4 100 1.0 8.0 2.8 V 3.2 3/4 1.00 2.00 0.50 0.50 2.8 V ms pF Unit mA nA mA V
VCE = 10 V, VGE = 0, f = 1 MHz
Note 1: Switching time test circuit & timing chart
2. Control (Tc = 25C)
Characteristics Fault output current Over temperature Fault output delay time Symbol OC OT td (Fo) Test Condition VGE = 15 V 3/4 VCC = 600 V, VGE = 15 V Min 480 100 3/4 Typ. 3/4 3/4 3/4 Max 3/4 125 8 Unit A C ms
3
2002-09-06
MG400Q2YS60A
3. Module (Tc = 25C)
Characteristics Junction to case thermal resistance Case to fin thermal resistance Symbol Rth (j-c) Rth (c-f) Test Condition Inverter IGBT stage Inverter FRD stage With silicon compound Min 3/4 3/4 3/4 Typ. 3/4 3/4 0.013 Max 0.033 0.068 3/4 C/W Unit C/W
Switching Time Test Circuit
RG -VGE
IF
VCC IC RG L
Timing Chart
90% 10%
VGE
90% Irr Irr IC trr 20% Irr 90%
10% td (on) td (off)
10%
tf
4
2002-09-06
MG400Q2YS60A
Remark

l Short circuit capability is 6 ms after fault output signal. Please keep following condition to use fault output signal. * VCC < 750 V = < * 14.8 V = VGE < 17.0 V = > 5.1 W * RG = * Tj < 125C =

l To use this product, VGE must be provided higher than 14.8 V In case VGE is less than 14.8 V, fault signal FO may not be output even under error conditions.

l For parallel use of this product, please use the same rank for both VCE (sat) and VF among IGBT in parallel without fail.
VCE (sat) 24 26 28 VF E F G Min 2.1 2.3 2.5 Max 2.4 2.6 2.8
5
2002-09-06
MG400Q2YS60A
IC - VCE
800 Common emitter Tj = 25C VGE = 20 V 15 V 12 V 800 Common emitter Tj = 125C
IC - VCE
15 V VGE = 20 V 12 V
(A)
600
(A) IC
600 10 V 400
Collector current
IC
400
10 V
Collector current
9V 200 8V
200 9V 8V 0 0 1 2 3 4 5
0 0
1
2
3
4
5
Collector-emitter voltage
VCE
(V)
Collector-emitter voltage
VCE
(V)
VCE - VGE
12 Common emitter 12 Common emitter
VCE - VGE
(V)
Tj = 125C 10
(V)
Tj = 25C 10
VCE
8
VCE
8 6
Collector-emitter voltage
Collector-emitter voltage
6 IC = 800 A 4 400 A 2 200 A 0 0
4 400 A 2
IC = 800 A
200 A 0 0 5 10 15 20 5 10 15
20
Gate-emitter voltage VGE
(V)
Gate-emitter voltage VGE
(V)
VCE - VGE
12 Common emitter 800 Tj = -40C 10 Common emitter VCE = 5 V
IC - VGE
(V)
VCE
(A)
6
600
Collector-emitter voltage
Collector current
IC
400 25C IC = 800 A 400 A 200
8
4
2 200 A 0 0 0 0
Tj = 125C
-40C
5
10
15
20
4
8
12
Gate-emitter voltage VGE
(V)
Gate-emitter voltage VGE
(V)
6
2002-09-06
MG400Q2YS60A
IF - VF
800 1000 Common cathode VGE = 0 V Common emitter RL = 1.5 W Tj = 25C
VCE, VGE - QG
20
(V)
Collector-emitter voltage
600 600 V 400 200 V
400 V
12
400 Tj = 125C -40C 200 25C
8 VCC = 0 V
200
4
0 0
1
2
3
4
5
0 0
1000
2000
0 3000
Forward voltage
VF
(V)
Charge
QG
(nC)
SW time - RG
10000 1000 Common emitter VCC = 600 V toff IC = 400 A VGE = 15 V
Eon, Eoff - RG
(mJ)
Tj = 25C Tj = 125C
(ns)
1000 td (off) ton td (on) tr 100 tf Common emitter VCC = 600 V IC = 400 A VGE = 15 V 5 10 15
SW loss Eon, Eoff
SW time
100
Eoff
Eon
10 0
Tj = 25C Tj = 125C 20
10 0
5
10
15
20
Gate resistance RG
(9)
Gate resistance RG
(9)
SW time - IC
10000 100
Eon, Eoff - IC
toff td (off)
(mJ)
(ns)
1000 ton tf
Eoff
SW loss Eon, Eoff
SW time
10 Eon
100
td (on) Common emitter VCC = 600 V RG = 5.1 W VGE = 15 V 100 200 300
Common emitter VCC = 600 V RG = 5.1 W VGE = 15 V 1 0 100 200 300 Tj = 25C Tj = 125C 400
tr
10 0
Tj = 25C Tj = 125C 400
Collector current
IC
(A)
Collector current
IC
(A)
7
2002-09-06
Gate-emitter voltage VGE
600
Forward current IF
VCE
800
16
(A)
(V)
MG400Q2YS60A
Irr, trr - IF
1000 100 Common cathode
Edsw - IF
(mJ)
Reverse recovery time trr (ns) Reverse recovery current Irr (A)
VCC = 600 V RG = 5.1 W VGE = 15 V Tj = 25C Tj = 125C
100 Irr
trr
Reverse recovery loss Edsw
10
Common cathode VCC = 600 V RG = 5.1 W VGE = 15 V 10 0 100 200 300 Tj = 25C Tj = 125C 400
1 0
100
200
300
400
Forward current
IF
(A)
Forward current
IF
(A)
C - VCE
100000 Cies 1000
Safe-operating area
IC max (pulsed)*
(A)
(pF)
IC max (continuous) 100 100 ms*
50 ms*
10000
Capacitance C
Coes
Collector current
IC
1000 Common emitter VGE = 0 V f = 1 MHz Tj = 25C 100 0.01 0.1 1 10 100 Cres
10
*: Single nonrepetitive pulse Tc = 25C Curves must be derated linearly with increase in temperature. 10
1 ms*
1 1
100
1000
10000
Collector-emitter voltage
VCE
(V)
Collector-emitter voltage
VCE
(V)
Reverse bias SOA
800 1
Rth - tw
TC = 25C
(A) IC
600
(C/W)
Collector current
0.1
Diode stage
400
Rth (j-c)
Transistor stage 0.01
200
Tj < 125C = RG = 5.1 W VGE = 15 V 400 800 1200
0 0
0.001 0.001
0.01
0.1
1
10
Collector-emitter voltage
VCE
(V)
Pulse width
tw
(s)
8
2002-09-06
MG400Q2YS60A
RESTRICTIONS ON PRODUCT USE
000707EAA
* TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice.
9
2002-09-06

▲Up To Search▲

Price & Availability of MG400Q2YS60A

	To Download MG400Q2YS60A Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .